First of all, this talk starts with a history of advances in power semiconductor devices that are playing as one of the most important roles in power electronics. Learning the history suggests future directions in research and development to research scientist and engineers. Since 1985, insulated-gate bipolar transistors (IGBTs) have been developing from the first generation to the sixth generation at present, and the seventh generation in the near future without any pause. In addition, SiC-MOSFET modules are available from the market at present. The SiC-MOSFET modules provide lower conduction and switching losses, as well as higher-temperature operation than the IGBT modules.

Next, this speaker talks about circuit configurations, controls and applications of power electronics with focus on high-power applications such as grid connections and motor drives. He presents some experimental waveforms obtained from a few downscaled systems that have been designed and constructed in his laboratory. The bidirectional isolated dual-active-bride dc-dc converter rated at 750 Vdc, 100 kW, and 20 kHz are using 1.2-kV, 400-A SiC-MOSFET modules. 

Finally, this speaker ends with the following message: “Since the 1980s, power electronics scientists and engineers have been making a long voyage from a Silicon planet to a Silicon-Carbide planet. It takes five years from now to complete this challenging voyage. The success in the voyage will bring a new world to power electronics.”

Hirofumi Akagi was born in Okayama, Japan, in 1951. He received the Ph. D. degree in electrical engineering from the Tokyo Institute of Technology, Tokyo, Japan, in 1979. He is currently a Professor in the department of electrical and electronic engineering at the Tokyo Institute of Technology.

His research interests include power electronics and its applications to industry, transportation, and utility. He has authored and coauthored more than 120 IEEE Transactions papers.  

Dr. Akagi has received six IEEE Transactions Prize Paper Awards from the Industry Applications and Power Electronics Societies. He is the recipient of the 2001 IEEE William E. Newell Power Electronics Award, the 2004 IEEE Industry Applications Society Outstanding Achievement Award, the 2008 IEEE Richard H. Kaufmann Technical Field Award, the 2012 IEEE Power & Energy Society Nari Hingorani Custom Power Award and the 2014 EPE Outstanding Service Award.

Dr. Akagi served as the President of the IEEE Power Electronics Society from Jan. 2007 to Dec. 2008 for two years. Since Jan. 2015, he has been serving as the IEEE Division II Director.